Infineon 4Mbit SPI FRAM Memory 8-Pin SOIC, CY15B104Q-SXI

RS Stock No.: 124-2933Brand: InfineonManufacturers Part No.: CY15B104Q-SXI
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Technical Document

Specifications

Memory Size

4Mbit

Organisation

512K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

5.33 x 5.33 x 1.78mm

Length

5.33mm

Maximum Operating Supply Voltage

3.6 V

Width

5.33mm

Height

1.78mm

Maximum Operating Temperature

+85 °C

Number of Bits per Word

8bit

Number of Words

512K

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2 V

Product details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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AED 135.05

Each (ex VAT)

AED 141.80

Each (inc VAT)

Infineon 4Mbit SPI FRAM Memory 8-Pin SOIC, CY15B104Q-SXI
Select packaging type

AED 135.05

Each (ex VAT)

AED 141.80

Each (inc VAT)

Infineon 4Mbit SPI FRAM Memory 8-Pin SOIC, CY15B104Q-SXI
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 4AED 135.05
5 - 9AED 111.80
10 - 49AED 108.80
50 - 187AED 106.00
188+AED 103.30

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Technical Document

Specifications

Memory Size

4Mbit

Organisation

512K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

5.33 x 5.33 x 1.78mm

Length

5.33mm

Maximum Operating Supply Voltage

3.6 V

Width

5.33mm

Height

1.78mm

Maximum Operating Temperature

+85 °C

Number of Bits per Word

8bit

Number of Words

512K

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2 V

Product details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.