Infineon 64kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24C64B-G
Technical Document
Specifications
Brand
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
550ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
5.5 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Product details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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AED 17.20
Each (In a Pack of 2) (ex VAT)
AED 18.06
Each (In a Pack of 2) (inc VAT)
2
AED 17.20
Each (In a Pack of 2) (ex VAT)
AED 18.06
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | AED 17.20 | AED 34.40 |
| 10 - 48 | AED 13.35 | AED 26.70 |
| 50 - 98 | AED 12.95 | AED 25.90 |
| 100 - 498 | AED 11.85 | AED 23.70 |
| 500+ | AED 11.55 | AED 23.10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
Serial-2 Wire, Serial-I2C
Data Bus Width
8bit
Maximum Random Access Time
550ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Maximum Operating Supply Voltage
5.5 V
Width
3.98mm
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Product details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products