Cypress Semiconductor 4kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24CL04B-G

RS Stock No.: 125-4210Brand: Cypress SemiconductorManufacturers Part No.: FM24CL04B-G
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Technical Document

Specifications

Memory Size

4kbit

Organisation

512 x 8 bit

Interface Type

Serial-2 Wire, Serial-I2C

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.48mm

Maximum Operating Supply Voltage

3.65 V

Maximum Operating Temperature

+85 °C

Number of Words

512

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2.7 V

Number of Bits per Word

8bit

Product details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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AED 8.35

Each (In a Pack of 5) (ex VAT)

AED 8.768

Each (In a Pack of 5) (inc VAT)

Cypress Semiconductor 4kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24CL04B-G
Select packaging type

AED 8.35

Each (In a Pack of 5) (ex VAT)

AED 8.768

Each (In a Pack of 5) (inc VAT)

Cypress Semiconductor 4kbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24CL04B-G
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 10AED 8.35AED 41.75
15 - 25AED 7.35AED 36.75
30 - 95AED 7.20AED 36.00
100 - 495AED 6.40AED 32.00
500+AED 6.15AED 30.75

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Technical Document

Specifications

Memory Size

4kbit

Organisation

512 x 8 bit

Interface Type

Serial-2 Wire, Serial-I2C

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.48mm

Maximum Operating Supply Voltage

3.65 V

Maximum Operating Temperature

+85 °C

Number of Words

512

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2.7 V

Number of Bits per Word

8bit

Product details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.