Infineon 64kbit Serial-I2C FRAM Memory 8-Pin DFN, FM24CL64B-DG
Technical Document
Specifications
Memory Size
64kbit
Organisation
8K x 8 bit
Interface Type
Serial-I2C
Data Bus Width
8bit
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Maximum Operating Supply Voltage
3.65 V
Maximum Operating Temperature
+85 °C
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Country of Origin
Thailand
Product details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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AED 18.20
Each (In a Pack of 2) (ex VAT)
AED 19.11
Each (In a Pack of 2) (inc VAT)
2
AED 18.20
Each (In a Pack of 2) (ex VAT)
AED 19.11
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | AED 18.20 | AED 36.40 |
| 10 - 18 | AED 13.95 | AED 27.90 |
| 20 - 98 | AED 13.25 | AED 26.50 |
| 100 - 498 | AED 12.35 | AED 24.70 |
| 500+ | AED 12.15 | AED 24.30 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Memory Size
64kbit
Organisation
8K x 8 bit
Interface Type
Serial-I2C
Data Bus Width
8bit
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Maximum Operating Supply Voltage
3.65 V
Maximum Operating Temperature
+85 °C
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Country of Origin
Thailand
Product details
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products