Infineon 1Mbit SPI FRAM Memory 8-Pin SOIC, FM25V10-G

RS Stock No.: 124-2988Brand: InfineonManufacturers Part No.: FM25V10-G
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Technical Document

Specifications

Memory Size

1Mbit

Organisation

128K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

18ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.47mm

Length

4.97mm

Maximum Operating Supply Voltage

3.6 V

Width

3.98mm

Height

1.47mm

Maximum Operating Temperature

+85 °C

Number of Bits per Word

8bit

Automotive Standard

AEC-Q100

Number of Words

128K

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2 V

Product details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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AED 55.10

Each (ex VAT)

AED 57.86

Each (inc VAT)

Infineon 1Mbit SPI FRAM Memory 8-Pin SOIC, FM25V10-G
Select packaging type

AED 55.10

Each (ex VAT)

AED 57.86

Each (inc VAT)

Infineon 1Mbit SPI FRAM Memory 8-Pin SOIC, FM25V10-G
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 9AED 55.10
10 - 24AED 44.45
25 - 99AED 43.40
100 - 499AED 42.25
500+AED 41.45

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Technical Document

Specifications

Memory Size

1Mbit

Organisation

128K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

18ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

4.97 x 3.98 x 1.47mm

Length

4.97mm

Maximum Operating Supply Voltage

3.6 V

Width

3.98mm

Height

1.47mm

Maximum Operating Temperature

+85 °C

Number of Bits per Word

8bit

Automotive Standard

AEC-Q100

Number of Words

128K

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2 V

Product details

F-RAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.