N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 onsemi BS170

RS Stock No.: 671-4736PBrand: onsemiManufacturers Part No.: BS170
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.2mm

Width

4.19mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

5.33mm

Product details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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AED 1.30

Each (Supplied in a Bag) (ex VAT)

AED 1.365

Each (Supplied in a Bag) (inc VAT)

N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 onsemi BS170
Select packaging type

AED 1.30

Each (Supplied in a Bag) (ex VAT)

AED 1.365

Each (Supplied in a Bag) (inc VAT)

N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 onsemi BS170
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Bag
10 - 90AED 1.30AED 13.00
100 - 240AED 0.60AED 6.00
250 - 490AED 0.60AED 6.00
500+AED 0.60AED 6.00

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

500 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

830 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.2mm

Width

4.19mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

5.33mm

Product details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.