onsemi FGD3440G2-F085 IGBT, 26.9 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

RS Stock No.: 807-0776Brand: ON SemiconductorManufacturers Part No.: FGD3440G2-F085
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Technical Document

Specifications

Maximum Continuous Collector Current

26.9 A

Maximum Collector Emitter Voltage

300 V

Maximum Gate Emitter Voltage

±10V

Maximum Power Dissipation

166 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q100

Product details

Automotive Ignition IGBT, Fairchild Semiconductor

These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.

Features

• Logic-level gate drive
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications

RS Product Codes

864-8802 FGB3040CS 400V 20A D2PAK
864-8805 FGB3040G2_F085 400V 25A DPAK-2
807-0767 FGD3040G2_F085 400V 25A DPAK
864-8880 FGI3040G2_F085 400V 25A I2PAK
864-8899 FGP3040G2_F085 400V 25A TO220
864-8809 FGB3245G2_F085 450V 23A D2PAK-2
864-8827 FGD3245G2_F085 450V 23A DPAK
807-0776 FGD3440G2_F085 400V 25A DPAK
864-8818 FGB3440G2_F085 400V 25A D2PAK-2
864-8893 FGP3440G2_F085 400V 25A TO220
807-8751 ISL9V5036P3_F085 360V 31A TO220
862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Stock information temporarily unavailable.

AED 6.65

Each (In a Pack of 5) (ex VAT)

AED 6.982

Each (In a Pack of 5) (inc VAT)

onsemi FGD3440G2-F085 IGBT, 26.9 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
Select packaging type

AED 6.65

Each (In a Pack of 5) (ex VAT)

AED 6.982

Each (In a Pack of 5) (inc VAT)

onsemi FGD3440G2-F085 IGBT, 26.9 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 45AED 6.65AED 33.25
50 - 95AED 6.00AED 30.00
100+AED 4.80AED 24.00

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Technical Document

Specifications

Maximum Continuous Collector Current

26.9 A

Maximum Collector Emitter Voltage

300 V

Maximum Gate Emitter Voltage

±10V

Maximum Power Dissipation

166 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q100

Product details

Automotive Ignition IGBT, Fairchild Semiconductor

These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.

Features

• Logic-level gate drive
• ESD Protection
• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications

RS Product Codes

864-8802 FGB3040CS 400V 20A D2PAK
864-8805 FGB3040G2_F085 400V 25A DPAK-2
807-0767 FGD3040G2_F085 400V 25A DPAK
864-8880 FGI3040G2_F085 400V 25A I2PAK
864-8899 FGP3040G2_F085 400V 25A TO220
864-8809 FGB3245G2_F085 450V 23A D2PAK-2
864-8827 FGD3245G2_F085 450V 23A DPAK
807-0776 FGD3440G2_F085 400V 25A DPAK
864-8818 FGB3440G2_F085 400V 25A D2PAK-2
864-8893 FGP3440G2_F085 400V 25A TO220
807-8751 ISL9V5036P3_F085 360V 31A TO220
862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK

Standards

AEC-Q101

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.