onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole

RS Stock No.: 671-5408Brand: onsemiManufacturers Part No.: FGL40N120ANDTU
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

64 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Package Type

TO-264

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

20 x 5 x 26mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Country of Origin

China

Product details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 48.20

Each (ex VAT)

AED 50.61

Each (inc VAT)

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole
Select packaging type

AED 48.20

Each (ex VAT)

AED 50.61

Each (inc VAT)

onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

64 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Package Type

TO-264

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

20 x 5 x 26mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Country of Origin

China

Product details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.