N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK onsemi HUFA76429D3ST_F085

RS Stock No.: 124-1427Brand: onsemiManufacturers Part No.: HUFA76429D3ST-F085
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.73mm

Width

6.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

38 nC @ 10 V

Height

2.39mm

Series

UltraFET

Minimum Operating Temperature

-55 °C

Country of Origin

United States

Product details

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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P.O.A.

N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK onsemi HUFA76429D3ST_F085

P.O.A.

N-Channel MOSFET, 20 A, 60 V, 3-Pin DPAK onsemi HUFA76429D3ST_F085
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.73mm

Width

6.22mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

38 nC @ 10 V

Height

2.39mm

Series

UltraFET

Minimum Operating Temperature

-55 °C

Country of Origin

United States

Product details

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.