Fuji Electric 7MBR75U4B-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 24-Pin M712, PCB Mount

RS Stock No.: 716-5671Brand: Fuji ElectricManufacturers Part No.: 7MBR75U4B-120-50
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Technical Document

Specifications

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

275 W

Package Type

M712

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

24

Transistor Configuration

3 Phase

Dimensions

122 x 62 x 17mm

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 618.35

Each (ex VAT)

AED 649.27

Each (inc VAT)

Fuji Electric 7MBR75U4B-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 24-Pin M712, PCB Mount

AED 618.35

Each (ex VAT)

AED 649.27

Each (inc VAT)

Fuji Electric 7MBR75U4B-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 24-Pin M712, PCB Mount
Stock information temporarily unavailable.

Buy in bulk

quantityUnit price
1 - 1AED 618.35
2 - 4AED 565.30
5 - 9AED 550.45
10 - 19AED 536.25
20+AED 531.10

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Technical Document

Specifications

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

275 W

Package Type

M712

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

24

Transistor Configuration

3 Phase

Dimensions

122 x 62 x 17mm

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.