Infineon 650V 6A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH06G65C5XKSA1

RS Stock No.: 133-8554Brand: InfineonManufacturers Part No.: IDH06G65C5XKSA1
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Technical Document

Specifications

Brand

Infineon

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

6A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Diode Type

SiC Schottky

Pin Count

2 + Tab

Maximum Forward Voltage Drop

2.1V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

54A

Country of Origin

Malaysia

Product details

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

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AED 7.90

Each (In a Tube of 500) (ex VAT)

AED 8.295

Each (In a Tube of 500) (inc VAT)

Infineon 650V 6A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH06G65C5XKSA1

500

Available in multiples of 500
500AED 3,950.00
1000AED 7,900.00
1500AED 11,850.00
2000AED 15,800.00
2500AED 19,750.00
3000AED 23,700.00
3500AED 27,650.00
4000AED 31,600.00
4500AED 35,550.00
5000AED 39,500.00
5500AED 43,450.00
6000AED 47,400.00
6500AED 51,350.00
7000AED 55,300.00
7500AED 59,250.00

AED 7.90

Each (In a Tube of 500) (ex VAT)

AED 8.295

Each (In a Tube of 500) (inc VAT)

Infineon 650V 6A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH06G65C5XKSA1
Stock information temporarily unavailable.

500

Available in multiples of 500
500AED 3,950.00
1000AED 7,900.00
1500AED 11,850.00
2000AED 15,800.00
2500AED 19,750.00
3000AED 23,700.00
3500AED 27,650.00
4000AED 31,600.00
4500AED 35,550.00
5000AED 39,500.00
5500AED 43,450.00
6000AED 47,400.00
6500AED 51,350.00
7000AED 55,300.00
7500AED 59,250.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

6A

Peak Reverse Repetitive Voltage

650V

Diode Configuration

Single

Diode Type

SiC Schottky

Pin Count

2 + Tab

Maximum Forward Voltage Drop

2.1V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

54A

Country of Origin

Malaysia

Product details

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more