Infineon 1200V 22.8A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH08G120C5XKSA1

RS Stock No.: 133-8555Brand: InfineonManufacturers Part No.: IDH08G120C5XKSA1
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Technical Document

Specifications

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

22.8A

Peak Reverse Repetitive Voltage

1200V

Diode Configuration

Single

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

2 + Tab

Maximum Forward Voltage Drop

2.85V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

70A

Country of Origin

Malaysia

Product details

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

Stock information temporarily unavailable.

Please check again later.

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AED 13.75

Each (In a Tube of 500) (ex VAT)

AED 14.438

Each (In a Tube of 500) (inc VAT)

Infineon 1200V 22.8A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH08G120C5XKSA1

AED 13.75

Each (In a Tube of 500) (ex VAT)

AED 14.438

Each (In a Tube of 500) (inc VAT)

Infineon 1200V 22.8A, SiC Schottky Diode, 2 + Tab-Pin TO-220 IDH08G120C5XKSA1
Stock information temporarily unavailable.

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Technical Document

Specifications

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

22.8A

Peak Reverse Repetitive Voltage

1200V

Diode Configuration

Single

Rectifier Type

Schottky Diode

Diode Type

SiC Schottky

Pin Count

2 + Tab

Maximum Forward Voltage Drop

2.85V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

70A

Country of Origin

Malaysia

Product details

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon