Infineon 1200V 15A, SiC Schottky Diode, 2-Pin TO-220 IDH15S120

RS Stock No.: 911-0982Brand: InfineonManufacturers Part No.: IDH15S120
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Technical Document

Specifications

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

15A

Peak Reverse Repetitive Voltage

1200V

Diode Configuration

Single

Rectifier Type

High Voltage

Diode Type

SiC Schottky

Pin Count

2

Maximum Forward Voltage Drop

2.55V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

78A

Country of Origin

Singapore

Product details

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

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P.O.A.

Infineon 1200V 15A, SiC Schottky Diode, 2-Pin TO-220 IDH15S120

P.O.A.

Infineon 1200V 15A, SiC Schottky Diode, 2-Pin TO-220 IDH15S120
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Mounting Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current

15A

Peak Reverse Repetitive Voltage

1200V

Diode Configuration

Single

Rectifier Type

High Voltage

Diode Type

SiC Schottky

Pin Count

2

Maximum Forward Voltage Drop

2.55V

Number of Elements per Chip

1

Diode Technology

SiC Schottky

Peak Non-Repetitive Forward Surge Current

78A

Country of Origin

Singapore

Product details

thinQ! Silicon Carbide (SiC) Schottky Diode, Infineon

The Infineon thinQ!™ Generation 5 offers a new thin wafer technology for SiC Schottky Barrier diodes improving the thermal characteristics. The SiC Schottky Diode devices offer advantageous high voltage power semiconductor features such as higher breakdown field strength and improved thermal conductivity allowing greater efficiency levels. This latest generation is suitable for use in Telecom SMPS and high-end Servers, UPS systems, Motor drives, Solar Inverters as well as PC Silverbox and Lighting applications.

Reduced EMI

Diodes and Rectifiers, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more