N-Channel MOSFET, 13.1 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPA60R460CEXKSA1

RS Stock No.: 133-8580Brand: InfineonManufacturers Part No.: IPA60R460CEXKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

13.1 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

102 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Height

16.15mm

Series

CoolMOS CE

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.9V

PRICED TO CLEAR

Yes

Country of Origin

China

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 2.15

Each (In a Tube of 500) (ex VAT)

AED 2.258

Each (In a Tube of 500) (inc VAT)

N-Channel MOSFET, 13.1 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPA60R460CEXKSA1

AED 2.15

Each (In a Tube of 500) (ex VAT)

AED 2.258

Each (In a Tube of 500) (inc VAT)

N-Channel MOSFET, 13.1 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPA60R460CEXKSA1
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

13.1 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3 + Tab

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

102 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.65mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Height

16.15mm

Series

CoolMOS CE

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

0.9V

PRICED TO CLEAR

Yes

Country of Origin

China

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.