N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP Infineon IPAW60R600CEXKSA1

RS Stock No.: 133-9787Brand: InfineonManufacturers Part No.: IPAW60R600CEXKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10.3 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220 FP

Series

CoolMOS CE

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Maximum Operating Temperature

+150 °C

Length

11.3mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

20.5 nC @ 10 V

Height

16.27mm

Forward Diode Voltage

0.9V

Minimum Operating Temperature

-40 °C

Country of Origin

China

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 2.90

Each (In a Tube of 450) (ex VAT)

AED 3.045

Each (In a Tube of 450) (inc VAT)

N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP Infineon IPAW60R600CEXKSA1

AED 2.90

Each (In a Tube of 450) (ex VAT)

AED 3.045

Each (In a Tube of 450) (inc VAT)

N-Channel MOSFET, 10.3 A, 600 V, 3-Pin TO-220 FP Infineon IPAW60R600CEXKSA1
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
450 - 450AED 2.90AED 1,305.00
900 - 900AED 2.75AED 1,237.50
1350+AED 2.55AED 1,147.50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10.3 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220 FP

Series

CoolMOS CE

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

28 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Maximum Operating Temperature

+150 °C

Length

11.3mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

20.5 nC @ 10 V

Height

16.27mm

Forward Diode Voltage

0.9V

Minimum Operating Temperature

-40 °C

Country of Origin

China

Product details

Infineon CoolMOS™ CE Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more