N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 Infineon IPW60R045CPFKSA1

RS Stock No.: 911-4909Brand: InfineonManufacturers Part No.: IPW60R045CPFKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

431 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

150 nC @ 10 V

Height

21.1mm

Series

CoolMOS CP

Minimum Operating Temperature

-55 °C

Country of Origin

Germany

Product details

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 63.00

Each (In a Tube of 30) (ex VAT)

AED 66.15

Each (In a Tube of 30) (inc VAT)

N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 Infineon IPW60R045CPFKSA1

AED 63.00

Each (In a Tube of 30) (ex VAT)

AED 66.15

Each (In a Tube of 30) (inc VAT)

N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 Infineon IPW60R045CPFKSA1
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
30 - 30AED 63.00AED 1,890.00
60+AED 59.85AED 1,795.50

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

431 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.21mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

16.13mm

Typical Gate Charge @ Vgs

150 nC @ 10 V

Height

21.1mm

Series

CoolMOS CP

Minimum Operating Temperature

-55 °C

Country of Origin

Germany

Product details

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.