P-Channel MOSFET, 74 A, 55 V, 3-Pin D2PAK Infineon IRF4905SPBF
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
74 A
Maximum Drain Source Voltage
55 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
8.81mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.54mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Height
4.69mm
Minimum Operating Temperature
-55 °C
Series
HEXFET
Country of Origin
Mexico
Product details
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 3.10
Each (In a Tube of 50) (ex VAT)
AED 3.255
Each (In a Tube of 50) (inc VAT)
50
AED 3.10
Each (In a Tube of 50) (ex VAT)
AED 3.255
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | AED 3.10 | AED 155.00 |
| 100 - 200 | AED 3.05 | AED 152.50 |
| 250 - 450 | AED 2.95 | AED 147.50 |
| 500 - 950 | AED 2.90 | AED 145.00 |
| 1000+ | AED 2.85 | AED 142.50 |
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Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
74 A
Maximum Drain Source Voltage
55 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
8.81mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.54mm
Typical Gate Charge @ Vgs
180 nC @ 10 V
Height
4.69mm
Minimum Operating Temperature
-55 °C
Series
HEXFET
Country of Origin
Mexico
Product details
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products