Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
214 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
16.13mm
Typical Gate Charge @ Vgs
123 nC @ 10 V
Height
21.1mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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AED 6.20
Each (In a Tube of 25) (ex VAT)
AED 6.51
Each (In a Tube of 25) (inc VAT)
25
AED 6.20
Each (In a Tube of 25) (ex VAT)
AED 6.51
Each (In a Tube of 25) (inc VAT)
25
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
25 - 25 | AED 6.20 | AED 155.00 |
50 - 100 | AED 4.95 | AED 123.75 |
125 - 225 | AED 4.70 | AED 117.50 |
250 - 600 | AED 4.40 | AED 110.00 |
625+ | AED 4.15 | AED 103.75 |
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
214 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
16.13mm
Typical Gate Charge @ Vgs
123 nC @ 10 V
Height
21.1mm
Series
HEXFET
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.