Infineon IRGB20B60PD1PBF IGBT, 40 A 600 V, 3-Pin TO-220AB, Through Hole

RS Stock No.: 124-8991Brand: InfineonManufacturers Part No.: IRGB20B60PD1PBF
brand-logo
View all in IGBTs

Technical Document

Specifications

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-220AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.54 x 4.69 x 8.77mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Mexico

Product details

Co-Pack IGBT over 21A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

AED 10.10

Each (In a Tube of 50) (ex VAT)

AED 10.605

Each (In a Tube of 50) (inc VAT)

Infineon IRGB20B60PD1PBF IGBT, 40 A 600 V, 3-Pin TO-220AB, Through Hole

AED 10.10

Each (In a Tube of 50) (ex VAT)

AED 10.605

Each (In a Tube of 50) (inc VAT)

Infineon IRGB20B60PD1PBF IGBT, 40 A 600 V, 3-Pin TO-220AB, Through Hole
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 200AED 10.10AED 505.00
250 - 450AED 8.30AED 415.00
500+AED 7.45AED 372.50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-220AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.54 x 4.69 x 8.77mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Mexico

Product details

Co-Pack IGBT over 21A, Infineon

Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT Transistors, International Rectifier

International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.