Infineon IRGB6B60KPBF IGBT, 13 A 600 V, 3-Pin TO-220AB, Through Hole
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
13 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.54 x 4.69 x 8.77mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Single IGBT up to 20A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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AED 6.55
Each (Supplied in a Tube) (ex VAT)
AED 6.878
Each (Supplied in a Tube) (inc VAT)
5
AED 6.55
Each (Supplied in a Tube) (ex VAT)
AED 6.878
Each (Supplied in a Tube) (inc VAT)
5
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 5 - 20 | AED 6.55 | AED 32.75 |
| 25 - 95 | AED 5.40 | AED 27.00 |
| 100 - 245 | AED 4.35 | AED 21.75 |
| 250 - 495 | AED 4.05 | AED 20.25 |
| 500+ | AED 3.80 | AED 19.00 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
13 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.54 x 4.69 x 8.77mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Single IGBT up to 20A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTs
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products