IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 192-641Brand: IXYSManufacturers Part No.: IXGH30N120B3D1
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Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 47.05

Each (ex VAT)

AED 49.40

Each (inc VAT)

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

AED 47.05

Each (ex VAT)

AED 49.40

Each (inc VAT)

IXYS IXGH30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.