IXYS MIXA300PF1200TSF, SimBus F , N-Channel Dual IGBT Transistor Module, 465 A max, 1200 V, PCB Mount

RS Stock No.: 124-0711Brand: IXYSManufacturers Part No.: MIXA300PF1200TSF
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Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

465 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

1.5 kW

Package Type

SimBus F

Configuration

Dual

Mounting Type

PCB Mount

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Dimensions

152 x 62 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 160.80

Each (ex VAT)

AED 168.84

Each (inc VAT)

IXYS MIXA300PF1200TSF, SimBus F , N-Channel Dual IGBT Transistor Module, 465 A max, 1200 V, PCB Mount

AED 160.80

Each (ex VAT)

AED 168.84

Each (inc VAT)

IXYS MIXA300PF1200TSF, SimBus F , N-Channel Dual IGBT Transistor Module, 465 A max, 1200 V, PCB Mount
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

465 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

1.5 kW

Package Type

SimBus F

Configuration

Dual

Mounting Type

PCB Mount

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Dimensions

152 x 62 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.