IXYS MUBW50-06A7 3 Phase Bridge IGBT Module, 75 A 600 V, 23-Pin, PCB Mount
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
23
Transistor Configuration
3 Phase
Dimensions
107.5 x 45 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 308.35
Each (In a Box of 6) (ex VAT)
AED 323.768
Each (In a Box of 6) (inc VAT)
6
AED 308.35
Each (In a Box of 6) (ex VAT)
AED 323.768
Each (In a Box of 6) (inc VAT)
6
Buy in bulk
| quantity | Unit price | Per Box |
|---|---|---|
| 6 - 24 | AED 308.35 | AED 1,850.10 |
| 30 - 54 | AED 285.20 | AED 1,711.20 |
| 60+ | AED 275.65 | AED 1,653.90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
IXYSMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
23
Transistor Configuration
3 Phase
Dimensions
107.5 x 45 x 17mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Product details
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products