Littelfuse NGB8207BNT4G IGBT, 20 A 365 V, 3-Pin D2PAK (TO-263), Surface Mount

RS Stock No.: 805-1756Brand: LittelfuseManufacturers Part No.: NGB8207BNT4G
brand-logo
View all in IGBTs

Technical Document

Specifications

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

365 V

Maximum Gate Emitter Voltage

±15V

Maximum Power Dissipation

165 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.29 x 9.65 x 4.83mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

AED 3.05

Each (Supplied as a Tape) (ex VAT)

AED 3.202

Each (Supplied as a Tape) (inc VAT)

Littelfuse NGB8207BNT4G IGBT, 20 A 365 V, 3-Pin D2PAK (TO-263), Surface Mount
Select packaging type

AED 3.05

Each (Supplied as a Tape) (ex VAT)

AED 3.202

Each (Supplied as a Tape) (inc VAT)

Littelfuse NGB8207BNT4G IGBT, 20 A 365 V, 3-Pin D2PAK (TO-263), Surface Mount
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

365 V

Maximum Gate Emitter Voltage

±15V

Maximum Power Dissipation

165 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.29 x 9.65 x 4.83mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.