N-Channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip 2N7008-G

RS Stock No.: 916-3721Brand: MicrochipManufacturers Part No.: 2N7008-G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.08mm

Width

4.06mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

5.33mm

Product details

2N7008 N-Channel MOSFET Transistors

The Microchip 2N7008 is an enhancement-mode (normally off) transistor that utilises a vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

Features

Free from Secondary Breakdown
Low-Power Drive Requirement
Ease of Parallel Operation
Low CISS and Fast Switching speeds
Excellent Thermal Stability
Integral Source-Drain diode
High Input Impedance and High Gain

MOSFET Transistors, Microchip

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AED 2.30

Each (In a Pack of 25) (ex VAT)

AED 2.415

Each (In a Pack of 25) (inc VAT)

N-Channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip 2N7008-G
Select packaging type

AED 2.30

Each (In a Pack of 25) (ex VAT)

AED 2.415

Each (In a Pack of 25) (inc VAT)

N-Channel MOSFET, 230 mA, 60 V, 3-Pin TO-92 Microchip 2N7008-G
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
25 - 75AED 2.30AED 57.50
100+AED 2.10AED 52.50

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Package Type

TO-92

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.08mm

Width

4.06mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

5.33mm

Product details

2N7008 N-Channel MOSFET Transistors

The Microchip 2N7008 is an enhancement-mode (normally off) transistor that utilises a vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

Features

Free from Secondary Breakdown
Low-Power Drive Requirement
Ease of Parallel Operation
Low CISS and Fast Switching speeds
Excellent Thermal Stability
Integral Source-Drain diode
High Input Impedance and High Gain

MOSFET Transistors, Microchip