N-Channel MOSFET, 1.1 A, 250 V Depletion, 8-Pin DFN Microchip DN2625DK6-G

RS Stock No.: 916-3725Brand: MicrochipManufacturers Part No.: DN2625DK6-G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

250 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Depletion

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.1mm

Typical Gate Charge @ Vgs

7.04 nC @ 1.5 V

Width

5.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.85mm

Forward Diode Voltage

1.8V

Product details

DN2625 N-Channel MOSFET Transistors

The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

Features

Low Gate Threshold Voltage
Designed to be Source-Driven
Low Switching Losses
Low Effective Output Capacitance
Designed for Inductive Loads

MOSFET Transistors, Microchip

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AED 13.80

Each (In a Pack of 5) (ex VAT)

AED 14.49

Each (In a Pack of 5) (inc VAT)

N-Channel MOSFET, 1.1 A, 250 V Depletion, 8-Pin DFN Microchip DN2625DK6-G
Select packaging type

AED 13.80

Each (In a Pack of 5) (ex VAT)

AED 14.49

Each (In a Pack of 5) (inc VAT)

N-Channel MOSFET, 1.1 A, 250 V Depletion, 8-Pin DFN Microchip DN2625DK6-G
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 20AED 13.80AED 69.00
25 - 95AED 13.40AED 67.00
100+AED 12.90AED 64.50

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

250 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Depletion

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.1mm

Typical Gate Charge @ Vgs

7.04 nC @ 1.5 V

Width

5.1mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.85mm

Forward Diode Voltage

1.8V

Product details

DN2625 N-Channel MOSFET Transistors

The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.

Features

Low Gate Threshold Voltage
Designed to be Source-Driven
Low Switching Losses
Low Effective Output Capacitance
Designed for Inductive Loads

MOSFET Transistors, Microchip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more