P-Channel MOSFET, 2.9 A, 20 V, 4-Pin DFN1010D-3 Nexperia PMXB75UPEZ

RS Stock No.: 153-0723Brand: NexperiaManufacturers Part No.: PMXB75UPEZ
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

20 V

Package Type

DFN1010D-3

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-1V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

8330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

8 V

Width

1.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.15mm

Typical Gate Charge @ Vgs

6.8 nC @ 10 V

Height

0.36mm

Minimum Operating Temperature

-55 °C

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AED 0.40

Each (On a Reel of 5000) (ex VAT)

AED 0.42

Each (On a Reel of 5000) (inc VAT)

P-Channel MOSFET, 2.9 A, 20 V, 4-Pin DFN1010D-3 Nexperia PMXB75UPEZ

AED 0.40

Each (On a Reel of 5000) (ex VAT)

AED 0.42

Each (On a Reel of 5000) (inc VAT)

P-Channel MOSFET, 2.9 A, 20 V, 4-Pin DFN1010D-3 Nexperia PMXB75UPEZ
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

20 V

Package Type

DFN1010D-3

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-1V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

8330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

8 V

Width

1.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.15mm

Typical Gate Charge @ Vgs

6.8 nC @ 10 V

Height

0.36mm

Minimum Operating Temperature

-55 °C