NXP BFR31,215 N-Channel JFET, 25 V, Idss 1 → 5mA, 3-Pin SOT-23

RS Stock No.: 484-2498PBrand: NXPManufacturers Part No.: BFR31,215
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Technical Document

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

1 → 5mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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AED 1.80

Each (Supplied on a Reel) (ex VAT)

AED 1.89

Each (Supplied on a Reel) (inc VAT)

NXP BFR31,215 N-Channel JFET, 25 V, Idss 1 → 5mA, 3-Pin SOT-23
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AED 1.80

Each (Supplied on a Reel) (ex VAT)

AED 1.89

Each (Supplied on a Reel) (inc VAT)

NXP BFR31,215 N-Channel JFET, 25 V, Idss 1 → 5mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Reel
10 - 90AED 1.80AED 18.00
100 - 240AED 1.60AED 16.00
250 - 490AED 1.35AED 13.50
500 - 990AED 1.05AED 10.50
1000+AED 0.80AED 8.00

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Technical Document

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

1 → 5mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.