NXP PMBFJ110,215 N-Channel JFET, 25 V, Idss min. 10mA, 3-Pin SOT-23
Technical Document
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
min. 10mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
18 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Each (In a Pack of 5) (ex VAT)
AED 1.838
Each (In a Pack of 5) (inc VAT)
5
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Technical Document
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
min. 10mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
18 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Length
3mm
Width
1.4mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products