onsemi 2SK3557-6-TB-E N-Channel JFET, 15 V, Idss 10 to 20mA, 3-Pin CP

RS Stock No.: 792-5164Brand: onsemiManufacturers Part No.: 2SK3557-6-TB-E
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

10 to 20mA

Maximum Drain Source Voltage

15 V

Maximum Drain Gate Voltage

-15V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

CP

Pin Count

3

Drain Gate On-Capacitance

10pF

Source Gate On-Capacitance

2.9pF

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+150 °C

Width

1.5mm

Length

2.9mm

Height

1.1mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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AED 1.55

Each (In a Pack of 25) (ex VAT)

AED 1.628

Each (In a Pack of 25) (inc VAT)

onsemi 2SK3557-6-TB-E N-Channel JFET, 15 V, Idss 10 to 20mA, 3-Pin CP
Select packaging type

AED 1.55

Each (In a Pack of 25) (ex VAT)

AED 1.628

Each (In a Pack of 25) (inc VAT)

onsemi 2SK3557-6-TB-E N-Channel JFET, 15 V, Idss 10 to 20mA, 3-Pin CP
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
25 - 100AED 1.55AED 38.75
125 - 225AED 1.40AED 35.00
250 - 600AED 1.25AED 31.25
625 - 1225AED 1.05AED 26.25
1250+AED 0.80AED 20.00

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

10 to 20mA

Maximum Drain Source Voltage

15 V

Maximum Drain Gate Voltage

-15V

Transistor Configuration

Single

Configuration

Single

Mounting Type

Surface Mount

Package Type

CP

Pin Count

3

Drain Gate On-Capacitance

10pF

Source Gate On-Capacitance

2.9pF

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+150 °C

Width

1.5mm

Length

2.9mm

Height

1.1mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.