onsemi 2SK3666-2-TB-E N-Channel JFET, 30 V, Idss 0.6 to 1.5mA, 3-Pin SOT-23

RS Stock No.: 800-9364Brand: onsemiManufacturers Part No.: 2SK3666-2-TB-E
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

0.6 to 1.5mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

200 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

1.1mm

Width

1.5mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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AED 0.90

Each (In a Pack of 100) (ex VAT)

AED 0.945

Each (In a Pack of 100) (inc VAT)

onsemi 2SK3666-2-TB-E N-Channel JFET, 30 V, Idss 0.6 to 1.5mA, 3-Pin SOT-23
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AED 0.90

Each (In a Pack of 100) (ex VAT)

AED 0.945

Each (In a Pack of 100) (inc VAT)

onsemi 2SK3666-2-TB-E N-Channel JFET, 30 V, Idss 0.6 to 1.5mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Pack
100 - 100AED 0.90AED 90.00
200 - 400AED 0.75AED 75.00
500 - 900AED 0.70AED 70.00
1000 - 1900AED 0.65AED 65.00
2000+AED 0.60AED 60.00

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

0.6 to 1.5mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

200 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

1.1mm

Width

1.5mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.