onsemi 2SK3666-3-TB-E N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin CP

RS Stock No.: 792-5161Brand: ON SemiconductorManufacturers Part No.: 2SK3666-3-TB-E
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Technical Document

Specifications

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

200 Ω

Mounting Type

Surface Mount

Package Type

CP

Pin Count

3

Drain Gate On-Capacitance

4pF

Source Gate On-Capacitance

1.1pF

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

1.1mm

Width

1.5mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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AED 1.55

Each (In a Pack of 50) (ex VAT)

AED 1.628

Each (In a Pack of 50) (inc VAT)

onsemi 2SK3666-3-TB-E N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin CP
Select packaging type

AED 1.55

Each (In a Pack of 50) (ex VAT)

AED 1.628

Each (In a Pack of 50) (inc VAT)

onsemi 2SK3666-3-TB-E N-Channel JFET, 30 V, Idss 1.2 to 3mA, 3-Pin CP
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Pack
50 - 200AED 1.55AED 77.50
250 - 450AED 1.45AED 72.50
500 - 1200AED 1.35AED 67.50
1250 - 2450AED 1.25AED 62.50
2500+AED 1.15AED 57.50

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Technical Document

Specifications

Channel Type

N

Idss Drain-Source Cut-off Current

1.2 to 3mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

200 Ω

Mounting Type

Surface Mount

Package Type

CP

Pin Count

3

Drain Gate On-Capacitance

4pF

Source Gate On-Capacitance

1.1pF

Dimensions

2.9 x 1.5 x 1.1mm

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

1.1mm

Width

1.5mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.