Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
200 Ω
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
1.1pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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AED 1.55
Each (In a Pack of 50) (ex VAT)
AED 1.628
Each (In a Pack of 50) (inc VAT)
50
AED 1.55
Each (In a Pack of 50) (ex VAT)
AED 1.628
Each (In a Pack of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
50 - 200 | AED 1.55 | AED 77.50 |
250 - 450 | AED 1.45 | AED 72.50 |
500 - 1200 | AED 1.35 | AED 67.50 |
1250 - 2450 | AED 1.25 | AED 62.50 |
2500+ | AED 1.15 | AED 57.50 |
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Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
200 Ω
Mounting Type
Surface Mount
Package Type
CP
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
1.1pF
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
1.1mm
Width
1.5mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.