Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
6 → 13mA
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Dimensions
4.58 x 3.86 x 4.58mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Height
4.58mm
Width
3.86mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
Please check again later.
P.O.A.
50
P.O.A.
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
6 → 13mA
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Dimensions
4.58 x 3.86 x 4.58mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
4.58mm
Height
4.58mm
Width
3.86mm
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.