Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
10 → 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CPH
Pin Count
5
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.9mm
Width
1.6mm
Country of Origin
China
Product details
Bipolar NPN & JFET Transistor, ON Semiconductor
Compact space-saving composite SMT package incoporating both an NPN Bipolar Transistor and N-channel JFET. In some devices the NPN emitter and JFET drain share a common connection.
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P.O.A.
20
P.O.A.
20
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Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
10 → 20mA
Maximum Drain Source Voltage
15 V
Maximum Drain Gate Voltage
-15V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
CPH
Pin Count
5
Drain Gate On-Capacitance
10pF
Source Gate On-Capacitance
2.9pF
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.9mm
Width
1.6mm
Country of Origin
China
Product details
Bipolar NPN & JFET Transistor, ON Semiconductor
Compact space-saving composite SMT package incoporating both an NPN Bipolar Transistor and N-channel JFET. In some devices the NPN emitter and JFET drain share a common connection.