onsemi CPH6904-TL-E, Dual N-Channel JFET, 25 V, Idss 20 to 40mA, 6-Pin CPH

RS Stock No.: 791-9403Brand: onsemiManufacturers Part No.: CPH6904-TL-E
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

20 to 40mA

Maximum Drain Source Voltage

25 V

Maximum Drain Gate Voltage

-25V

Configuration

Dual

Transistor Configuration

Common Source

Mounting Type

Surface Mount

Package Type

CPH

Pin Count

6

Drain Gate On-Capacitance

6pF

Source Gate On-Capacitance

2.3pF

Dimensions

2.9 x 1.6 x 0.9mm

Length

2.9mm

Height

0.9mm

Width

1.6mm

Maximum Operating Temperature

+150 °C

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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AED 2.45

Each (In a Pack of 10) (ex VAT)

AED 2.572

Each (In a Pack of 10) (inc VAT)

onsemi CPH6904-TL-E, Dual N-Channel JFET, 25 V, Idss 20 to 40mA, 6-Pin CPH
Select packaging type

AED 2.45

Each (In a Pack of 10) (ex VAT)

AED 2.572

Each (In a Pack of 10) (inc VAT)

onsemi CPH6904-TL-E, Dual N-Channel JFET, 25 V, Idss 20 to 40mA, 6-Pin CPH
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Pack
10 - 10AED 2.45AED 24.50
20 - 40AED 1.55AED 15.50
50 - 90AED 1.35AED 13.50
100 - 190AED 1.15AED 11.50
200+AED 1.15AED 11.50

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

20 to 40mA

Maximum Drain Source Voltage

25 V

Maximum Drain Gate Voltage

-25V

Configuration

Dual

Transistor Configuration

Common Source

Mounting Type

Surface Mount

Package Type

CPH

Pin Count

6

Drain Gate On-Capacitance

6pF

Source Gate On-Capacitance

2.3pF

Dimensions

2.9 x 1.6 x 0.9mm

Length

2.9mm

Height

0.9mm

Width

1.6mm

Maximum Operating Temperature

+150 °C

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.