Dual N-Channel MOSFET, 151 A, 100 V, 8-Pin PQFN onsemi FDMS86180

RS Stock No.: 146-4098Brand: ON SemiconductorManufacturers Part No.: FDMS86180
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

151 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

138 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6mm

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

60 @ 10 V nC

Maximum Operating Temperature

+150 °C

Height

1.05mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Product details

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

AED 11.00

Each (In a Pack of 10) (ex VAT)

AED 11.55

Each (In a Pack of 10) (inc VAT)

Dual N-Channel MOSFET, 151 A, 100 V, 8-Pin PQFN onsemi FDMS86180
Select packaging type

AED 11.00

Each (In a Pack of 10) (ex VAT)

AED 11.55

Each (In a Pack of 10) (inc VAT)

Dual N-Channel MOSFET, 151 A, 100 V, 8-Pin PQFN onsemi FDMS86180
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
10 - 90AED 11.00AED 110.00
100 - 490AED 9.05AED 90.50
500 - 990AED 8.25AED 82.50
1000 - 1490AED 7.15AED 71.50
1500+AED 6.85AED 68.50

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

151 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

138 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6mm

Number of Elements per Chip

2

Length

5mm

Typical Gate Charge @ Vgs

60 @ 10 V nC

Maximum Operating Temperature

+150 °C

Height

1.05mm

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Product details

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor