N-Channel MOSFET, 51 A, 100 V, 8-Pin PQFN8 onsemi FDMS86183

RS Stock No.: 146-4116Brand: onsemiManufacturers Part No.: FDMS86183
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

100 V

Series

PowerTrench

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

63 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

5.85mm

Length

5mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

1.05mm

Product details

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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AED 5.30

Each (In a Pack of 25) (ex VAT)

AED 5.565

Each (In a Pack of 25) (inc VAT)

N-Channel MOSFET, 51 A, 100 V, 8-Pin PQFN8 onsemi FDMS86183
Select packaging type

AED 5.30

Each (In a Pack of 25) (ex VAT)

AED 5.565

Each (In a Pack of 25) (inc VAT)

N-Channel MOSFET, 51 A, 100 V, 8-Pin PQFN8 onsemi FDMS86183
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
25 - 75AED 5.30AED 132.50
100 - 475AED 4.20AED 105.00
500 - 975AED 3.55AED 88.75
1000 - 2975AED 2.90AED 72.50
3000+AED 2.85AED 71.25

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

100 V

Series

PowerTrench

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

63 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

5.85mm

Length

5mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Height

1.05mm

Product details

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more