onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole

RS Stock No.: 864-8795Brand: onsemiManufacturers Part No.: FGA60N65SMD
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

120 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

600 W

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 26.05

Each (ex VAT)

AED 27.35

Each (inc VAT)

onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole
Select packaging type

AED 26.05

Each (ex VAT)

AED 27.35

Each (inc VAT)

onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 9AED 26.05
10 - 99AED 20.95
100 - 249AED 18.85
250 - 499AED 18.75
500+AED 17.00

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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

120 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

600 W

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more