onsemi FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247, Through Hole

RS Stock No.: 864-8849Brand: onsemiManufacturers Part No.: FGH30S130P
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1300 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

500 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Product details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 28.55

Each (In a Pack of 2) (ex VAT)

AED 29.978

Each (In a Pack of 2) (inc VAT)

onsemi FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247, Through Hole
Select packaging type

AED 28.55

Each (In a Pack of 2) (ex VAT)

AED 29.978

Each (In a Pack of 2) (inc VAT)

onsemi FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
2 - 8AED 28.55AED 57.10
10 - 98AED 24.20AED 48.40
100 - 248AED 19.40AED 38.80
250 - 498AED 18.25AED 36.50
500+AED 17.50AED 35.00

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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1300 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

500 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Product details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.