onsemi FGH40N60SMDF IGBT, 80 A 600 V, 3-Pin TO-247AB, Through Hole

RS Stock No.: 739-4942PBrand: onsemiManufacturers Part No.: FGH40N60SMDF
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-247AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.6 x 4.7 x 20.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 26.35

Each (Supplied in a Tube) (ex VAT)

AED 27.67

Each (Supplied in a Tube) (inc VAT)

onsemi FGH40N60SMDF IGBT, 80 A 600 V, 3-Pin TO-247AB, Through Hole
Select packaging type

AED 26.35

Each (Supplied in a Tube) (ex VAT)

AED 27.67

Each (Supplied in a Tube) (inc VAT)

onsemi FGH40N60SMDF IGBT, 80 A 600 V, 3-Pin TO-247AB, Through Hole
Stock information temporarily unavailable.
Select packaging type

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quantityUnit price
1 - 9AED 26.35
10 - 49AED 22.35
50 - 99AED 21.15
100 - 249AED 19.75
250+AED 18.85

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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-247AB

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.6 x 4.7 x 20.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.