onsemi FGPF15N60UNDF IGBT, 30 A 600 V, 3-Pin TO-220F, Through Hole

RS Stock No.: 807-0785PBrand: onsemiManufacturers Part No.: FGPF15N60UNDF
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

42 W

Package Type

TO-220F

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.36 x 2.74 x 16.07mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 12.40

Each (Supplied in a Tube) (ex VAT)

AED 13.02

Each (Supplied in a Tube) (inc VAT)

onsemi FGPF15N60UNDF IGBT, 30 A 600 V, 3-Pin TO-220F, Through Hole
Select packaging type

AED 12.40

Each (Supplied in a Tube) (ex VAT)

AED 13.02

Each (Supplied in a Tube) (inc VAT)

onsemi FGPF15N60UNDF IGBT, 30 A 600 V, 3-Pin TO-220F, Through Hole
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Tube
5 - 5AED 12.40AED 62.00
10 - 95AED 10.65AED 53.25
100 - 245AED 8.25AED 41.25
250 - 495AED 7.95AED 39.75
500+AED 6.95AED 34.75

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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

42 W

Package Type

TO-220F

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.36 x 2.74 x 16.07mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.