onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount

RS Stock No.: 807-6660PBrand: onsemiManufacturers Part No.: HGT1S10N120BNST
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

298 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.67 x 11.33 x 4.83mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 17.05

Each (Supplied on a Reel) (ex VAT)

AED 17.902

Each (Supplied on a Reel) (inc VAT)

onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount
Select packaging type

AED 17.05

Each (Supplied on a Reel) (ex VAT)

AED 17.902

Each (Supplied on a Reel) (inc VAT)

onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Reel
2 - 6AED 17.05AED 34.10
8 - 38AED 15.15AED 30.30
40 - 198AED 13.45AED 26.90
200 - 398AED 11.75AED 23.50
400+AED 10.45AED 20.90

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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

298 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.67 x 11.33 x 4.83mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.