onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

RS Stock No.: 671-5436PBrand: onsemiManufacturers Part No.: HGTG30N60A4
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 31.40

Each (Supplied in a Tube) (ex VAT)

AED 32.97

Each (Supplied in a Tube) (inc VAT)

onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole
Select packaging type

AED 31.40

Each (Supplied in a Tube) (ex VAT)

AED 32.97

Each (Supplied in a Tube) (inc VAT)

onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 5AED 31.40
6 - 14AED 29.10
15+AED 27.95

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more