Technical Document
Specifications
Brand
ON SemiconductorChannel Type
P
Idss Drain-Source Cut-off Current
-2 → -25mA
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Dimensions
5.2 x 4.19 x 5.33mm
Height
5.33mm
Width
4.19mm
Maximum Power Dissipation
350 mW
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
5.2mm
Country of Origin
Japan
Product details
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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P.O.A.
2000
P.O.A.
2000
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Technical Document
Specifications
Brand
ON SemiconductorChannel Type
P
Idss Drain-Source Cut-off Current
-2 → -25mA
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Dimensions
5.2 x 4.19 x 5.33mm
Height
5.33mm
Width
4.19mm
Maximum Power Dissipation
350 mW
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
5.2mm
Country of Origin
Japan
Product details
P-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.