onsemi MMBF4391LT1G N-Channel JFET, 30 V, Idss 50 to 150mA, 3-Pin SOT-23

RS Stock No.: 625-5723Brand: onsemiManufacturers Part No.: MMBF4391LT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

50 to 150mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

30 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.9 x 1.3 x 0.94mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

0.94mm

Width

1.3mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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AED 1.50

Each (In a Pack of 5) (ex VAT)

AED 1.575

Each (In a Pack of 5) (inc VAT)

onsemi MMBF4391LT1G N-Channel JFET, 30 V, Idss 50 to 150mA, 3-Pin SOT-23
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AED 1.50

Each (In a Pack of 5) (ex VAT)

AED 1.575

Each (In a Pack of 5) (inc VAT)

onsemi MMBF4391LT1G N-Channel JFET, 30 V, Idss 50 to 150mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

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quantityUnit pricePer Pack
5 - 45AED 1.50AED 7.50
50 - 95AED 1.40AED 7.00
100 - 245AED 1.20AED 6.00
250 - 495AED 1.10AED 5.50
500+AED 1.05AED 5.25

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

50 to 150mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

30 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

2.9 x 1.3 x 0.94mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.9mm

Height

0.94mm

Width

1.3mm

Product details

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.