Littelfuse NGB8245NT4G IGBT, 50 A 500 V, 3-Pin D2PAK (TO-263), Surface Mount

RS Stock No.: 802-1771Brand: LittelfuseManufacturers Part No.: NGB8245NT4G
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Technical Document

Specifications

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

500 V

Maximum Gate Emitter Voltage

500V

Maximum Power Dissipation

150 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

9.65 x 10.29 x 4.83mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 6.60

Each (In a Pack of 5) (ex VAT)

AED 6.93

Each (In a Pack of 5) (inc VAT)

Littelfuse NGB8245NT4G IGBT, 50 A 500 V, 3-Pin D2PAK (TO-263), Surface Mount
Select packaging type

AED 6.60

Each (In a Pack of 5) (ex VAT)

AED 6.93

Each (In a Pack of 5) (inc VAT)

Littelfuse NGB8245NT4G IGBT, 50 A 500 V, 3-Pin D2PAK (TO-263), Surface Mount
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 45AED 6.60AED 33.00
50 - 95AED 6.45AED 32.25
100+AED 6.20AED 31.00

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Technical Document

Specifications

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

500 V

Maximum Gate Emitter Voltage

500V

Maximum Power Dissipation

150 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

9.65 x 10.29 x 4.83mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.