onsemi NGTB25N120IHLWG IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 773-7383Brand: onsemiManufacturers Part No.: NGTB25N120IHLWG
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

192 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.08mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 13.55

Each (ex VAT)

AED 14.23

Each (inc VAT)

onsemi NGTB25N120IHLWG IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Select packaging type

AED 13.55

Each (ex VAT)

AED 14.23

Each (inc VAT)

onsemi NGTB25N120IHLWG IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type

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quantityUnit price
1 - 4AED 13.55
5 - 9AED 12.35
10 - 24AED 11.60
25 - 49AED 11.00
50+AED 9.55

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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

192 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.08mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.