onsemi NGTB30N120IHRWG IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 796-1331PBrand: ON SemiconductorManufacturers Part No.: NGTB30N120IHRWG
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Technical Document

Specifications

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

384 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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AED 18.60

Each (Supplied in a Tube) (ex VAT)

AED 19.53

Each (Supplied in a Tube) (inc VAT)

onsemi NGTB30N120IHRWG IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole
Select packaging type

AED 18.60

Each (Supplied in a Tube) (ex VAT)

AED 19.53

Each (Supplied in a Tube) (inc VAT)

onsemi NGTB30N120IHRWG IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Tube
2 - 4AED 18.60AED 37.20
6 - 10AED 16.05AED 32.10
12 - 38AED 14.80AED 29.60
40 - 78AED 14.05AED 28.10
80+AED 13.65AED 27.30

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Technical Document

Specifications

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

384 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.