onsemi NGTB40N120FLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 124-5387Brand: ON SemiconductorManufacturers Part No.: NGTB40N120FL2WG
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Technical Document

Specifications

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

535 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Country of Origin

China

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Stock information temporarily unavailable.

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Stock information temporarily unavailable.

AED 16.80

Each (In a Tube of 30) (ex VAT)

AED 17.64

Each (In a Tube of 30) (inc VAT)

onsemi NGTB40N120FLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

AED 16.80

Each (In a Tube of 30) (ex VAT)

AED 17.64

Each (In a Tube of 30) (inc VAT)

onsemi NGTB40N120FLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
30 - 30AED 16.80AED 504.00
60 - 120AED 15.95AED 478.50
150+AED 15.10AED 453.00

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Technical Document

Specifications

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

535 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Country of Origin

China

Product details

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.