N-Channel MOSFET, 32 A, 100 V, 3-Pin DPAK onsemi NTD6414ANT4G

RS Stock No.: 124-5402Brand: ON SemiconductorManufacturers Part No.: NTD6414ANT4G
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

100 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Country of Origin

Czech Republic

Product details

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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AED 2.35

Each (On a Reel of 2500) (ex VAT)

AED 2.468

Each (On a Reel of 2500) (inc VAT)

N-Channel MOSFET, 32 A, 100 V, 3-Pin DPAK onsemi NTD6414ANT4G

AED 2.35

Each (On a Reel of 2500) (ex VAT)

AED 2.468

Each (On a Reel of 2500) (inc VAT)

N-Channel MOSFET, 32 A, 100 V, 3-Pin DPAK onsemi NTD6414ANT4G
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

37 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

100 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Country of Origin

Czech Republic

Product details

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor